Power and Technology Scaling into the 5 nm Node with Stacked Nanosheets

Author:

Hook Terence B.

Publisher

Elsevier BV

Subject

General Energy

Reference12 articles.

1. 50 Years of Moore's Law. Intel. https://www.intel.com/content/www/us/en/silicon-innovations/moores-law-technology.html.

2. Dennard, R. (2016). Dennard Scaling. IBM. http://researcher.watson.ibm.com/researcher/view_group.php?id=7057.

3. Loubet, N., Hook, T., Montanini, P., Yeung, C.-W., Kanakasabapathy, S., Guillom, M., Yamashita, T., Zhang, J., Miao, X., and Wang, J., et al. (2017). Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET. Symposium on VLSI Technology. IEEE.

4. Johnson, R.C. (2017). IBM claims 5nm nanosheet breakthrough. EE Times, 5 June.

5. Barrett, B. (2017). An IBM breakthrough ensures silicon will keep shrinking. Wired, 5 June.

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