A 10 Gb/s Line Driver in 65 nm CMOS Technology for Radiation-Pervaded and High-Temperature Applications
Author:
Affiliation:
1. Department of Information Engineering, University of Pisa, Pisa, Italy
2. National Institute of Nuclear Physics, Pisa Section, Pisa, Italy
Funder
Dipartimento di Eccellenza Crosslab and FoReLab Projects
Italian Ministry of Education, University and Research
National Institute of Nuclear Physics (INFN) PHOS4BRAIN and FALAPHEL Projects
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/10005208/10188687.pdf?arnumber=10188687
Reference42 articles.
1. Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degK
2. A 3.2-Gb/s serial link transmitter in 0.18μm CMOS technology for CMOS Monolithic Active Pixel Sensors application
3. A 1.2 Gb/s Data Transmission Unit in CMOS 0.18 μm technology for the ALICE Inner Tracking System front-end ASIC
4. 1-Grad total dose evaluation of 65 nm CMOS technology for the HL-LHC upgrades
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