IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control
Author:
Affiliation:
1. Interdisciplinary Graduate School of Engineering Science, Kyushu University, Fukuoka, Japan
2. Institute of Industrial Science, The University of Tokyo, Tokyo, Japan
3. Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan
Funder
New Energy and Industrial Technology Development Organization
Japan Science and Technology Agency, Support for Pioneer Research Initiated by the Next Generation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/10005208/10018193.pdf?arnumber=10018193
Reference19 articles.
1. Load Current and Temperature Dependent Optimization of Active Gate Driving Vectors
2. Optimization Platform to Find a Switching Pattern of Digital Active Gate Drive for Reducing Both Switching Loss and Surge Voltage
3. Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC
4. Digital Adaptive Driving Strategies for High-Voltage IGBTs
5. Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration
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