Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control-Reference-Cited by-同舟云学术

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Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control

Published:2023-10 Issue: Volume:6 Page:100052
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Mamee Thatree^ORCID,Lou Zaiqi^ORCID,Hata Katsuhiro,Takamiya Makoto,Nishizawa Shin-ichi,Saito Wataru

Funder

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Reference12 articles.

1. Study of bonding wire failure effects on external measurable signals of IGBT module;Kexin;IEEE Transactions on Device and Materials Reliability,2014

2. In situ condition monitoring of IGBTs based on the miller plateau duration;Liu;IEEE Transactions on Power Electronics,2018

3. IGBT Power module design for suppressing gate voltage spike at digital gate control;Lou;IEEE Access: Practical Innovations, Open Solutions,2023

4. Junction temperature extraction approach with turn-off delay time for high-voltage high-power IGBT modules;Luo;IEEE Transactions on Power Electronics,2016

5. Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module;Mamee;Microelectronics Reliability,2023

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN);IEEE Access;2024

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