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Bottom Oxide Bulk FinFETs Without Punch-Through-Stopper for Extending Toward 5-nm Node

  • Published:2019 Issue: Volume:7 Page:75762-75767
  • ISSN:2169-3536
  • Container-title:IEEE Access
  • language:
  • Short-container-title:IEEE Access

Author:

Yoon Jun-Sik,Jeong Jinsu,Lee Seunghwan,Baek Rock-HyunORCID

Funder

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium Support Program for the Development of the Future Semiconductor Device

National Research Foundation of Korea

POSTECH-Samsung Electronics Industry-Academia Cooperative Research Center

IC Design Education Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors;Nanomaterials;2024-06-10

2. Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits’ Performance;ECS Journal of Solid State Science and Technology;2024-06-03

3. Analysis of Nanosheet Field-Effect Transistor With Local Bottom Isolation;IEEE Transactions on Electron Devices;2024-05

4. Design of 4:2 Compressor for Low Power and Area Efficient Based On 5-NM FinFETs;2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI);2024-04-17

5. Multiple Bit Upsets in Register Circuits at the 5-nm Bulk FinFET Node;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
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