Introduction of Charge Transport Simulation Models That Fully Consider the Ionization Process-Reference-Cited by-同舟云学术

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Introduction of Charge Transport Simulation Models That Fully Consider the Ionization Process

Published:2024-02 Issue:1 Volume:31 Page:288-296
ISSN:1070-9878
Container-title:IEEE Transactions on Dielectrics and Electrical Insulation
language:
Short-container-title:IEEE Trans. Dielect. Electr. Insul.

Author:

He Yifei¹^ORCID,Wu Kai¹^ORCID,Wu Yang¹^ORCID,Zhang Chunyang¹^ORCID,Lv Zepeng¹,Fabiani Davide²^ORCID

Affiliation:

1. State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, China

2. Department of Electrical Electronics and Information Engineering, University of Bologna, Bologna, Italy

Funder

China Scholarship Council for One Year’s Study at the University of Bologna

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/94/10415316/10315141.pdf?arnumber=10315141

Reference25 articles.

1. Electrical properties of field grading materials influenced by the silicon carbide grain size

2. Interface charges between insulating materials

3. HVDC insulation boundary conditions for modeling and simulation

4. A model for bipolar charge transport, trapping and recombination in degassed crosslinked polyethene

5. Comparison of two models on simulating electric field in HVDC cable insulation

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