Author:
Gilmer D.C.,Schaeffer J.K.,Taylor W.J.,Spencer G.,Triyoso D.H.,Raymond M.,Roan D.,Smith J.,Capasso C.,Hegde R.I.,Samavedam S.B.
Cited by
1 articles.
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1. Work Function Setting in High-k Metal Gate Devices;Complementary Metal Oxide Semiconductor;2018-08-01