Proposal and Simulation of Ga<sub>2</sub>O<sub>3</sub> MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation-Reference-Cited by-同舟云学术

Proposal and Simulation of Ga₂O₃ MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation

Published:2022-07 Issue:7 Volume:69 Page:3617-3622
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lei Weina¹,Dang Kui¹,Zhou Hong¹^ORCID,Zhang Jincheng¹^ORCID,Wang Chenlu¹^ORCID,Xin Qian²^ORCID,Alghamdi Sami³^ORCID,Liu Zhihong¹,Feng Qian¹^ORCID,Sun Rujun¹^ORCID,Zhang Chunfu¹^ORCID,Hao Yue¹

Affiliation:

1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. School of Microelectronics, Institute of Novel Semiconductors, Shandong University, Jinan, China

3. Electrical and Computer Engineering Department and Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia

Funder

Shaanxi Provincial Natural Science Foundation

Shandong Provincial Natural Science Foundation

National Natural Science Foundation of China

Deanship of Scientific Research (DSR) through King Abdulaziz University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09774424.pdf?arnumber=9774424

Reference36 articles.

1. Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications

2. Impact ionization in β-Ga2O3

3. Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

4. Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²

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