Evaluating the Performances of the Ultralow Power Magnetoelectric Random Access Memory With a Physics-Based Compact Model of the Antiferromagnet/Ferromagnet Bilayer-Reference-Cited by-同舟云学术

Evaluating the Performances of the Ultralow Power Magnetoelectric Random Access Memory With a Physics-Based Compact Model of the Antiferromagnet/Ferromagnet Bilayer

Published:2022-05 Issue:5 Volume:69 Page:2331-2337
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liao Yu-Ching¹^ORCID,Hsu Chia-Sheng¹^ORCID,Nikonov Dmitri²^ORCID,Chang Sou-Chi²^ORCID,Li Hai²^ORCID,Young Ian A.²^ORCID,Naeemi Azad¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. Components Research, Technology & Manufacturing Group, Intel Corporation, Hillsboro, OR, USA

Funder

Intel Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09743282.pdf?arnumber=9743282

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