High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With <i>SS</i> = 1.25 mV/dec—Part II: Dynamic Switching and RF Performance-Reference-Cited by-同舟云学术

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part II: Dynamic Switching and RF Performance

Published:2022-07 Issue:7 Volume:69 Page:3549-3556
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Han Daxin¹^ORCID,Bonomo Giorgio¹^ORCID,Ruiz Diego Calvo¹^ORCID,Arabhavi Akshay Mahadev¹^ORCID,Ostinelli Olivier J. S.¹^ORCID,Bolognesi Colombo R.¹^ORCID

Affiliation:

1. Department of Information Technology and Electrical Engineering, MWE Group, ETH Zürich, Zürich, Switzerland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09772759.pdf?arnumber=9772759

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3. Monolayer MoS2steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection;liu;IEDM Tech Dig,2020

4. Steep-slope hysteresis-free negative capacitance MoS2 transistors

5. Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High ${I} _{\scriptscriptstyle\text {ON}}/{I} _{\scriptscriptstyle\text {OFF}}$ Ratio and Steep Swing

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3. Design and Performance Projection of Virtually Doped Dual Gate Junctionless IMOS;Silicon;2023-05-06

4. Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor;Applied Physics Letters;2023-04-10