A Hamming Weight Calculation of Binary String in One nMOS Transistor–One Ag/HfO2/Black Phosphorus/Pt Memristor

Author:

He Hui1,Pei Yifei1,Wang Jingjuan1,Zhang Zichang2,Liu Jing3ORCID,Yan Lei1,Zhao Ying1,Li Xiaoyu1,Wei Yongxin1,Chen Jingsheng4ORCID,Yan Xiaobing1ORCID

Affiliation:

1. Institute of Life Science and Green Development, the Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, and the College of Physics Science and Technology, Hebei University, Baoding, China

2. Cambricon Technologies Corporation Ltd., Beijing, China

3. NeuMem Company Ltd., Hefei, China

4. National University of Singapore, Lower Kent Ridge Rd, Singapore

Funder

National Key Research and Development Plan “Nano Frontier” Key Special Project

Cultivation Projects of National Major Research and Development Project

National Natural Science Foundation of China

Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences

Hebei Basic Research Special Key Project

Support Program for the Top Young Talents of Hebei Province

Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province

Interdisciplinary Research Program of Natural Science of Hebei University

Institute of Life Sciences and Green Development

Natural Science Foundation of Hebei Province

Outstanding Young Scientific Research and Innovation Team of Hebei University

Special Support Funds for National High Level Talents

Advanced Talents Incubation Program of the Hebei University

Science and Technology Project of Hebei Education Department

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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