High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer-Reference-Cited by-同舟云学术

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

Published:2019-11-04 Issue:19 Volume:115 Page:193503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Yudan¹,Wu Facai²,Liu Xingqiang¹,Lin Jun¹,Chen Jui-Yuan³,Wu Wen-Wei³,Wei Jingsong²,Liu Yuan¹,Liu Qi²^ORCID,Liao Lei¹

Affiliation:

1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China

2. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, China

3. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30020, Taiwan

Funder

National Key Research and Development Program of Ministry of Science and Technology

Strategic Priority Research Program of Chinese Academy of Sciences

Natural Science Foundation of Hunan Province

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5115531

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