The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure-Reference-Cited by-同舟云学术

The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure

Published:2022-09 Issue:9 Volume:69 Page:5386-5390
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen K. -C.¹^ORCID,Basu Nilabh¹^ORCID,Chen S. -C.²,Lee M. -H.³^ORCID,Liao M. -H.⁴^ORCID

Affiliation:

1. Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan

2. Department of Materials Engineering and the Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, Taipei, Taiwan

3. Graduate Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan

4. Graduate School of Advanced Technology and Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan

Funder

Ministry of Science and Technology (MOST), Taiwan

Ministry of Education, Taiwan

Powerchip Semiconductor Manufacturing Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09848419.pdf?arnumber=9848419

Reference21 articles.

1. The Demonstration of Carbon Nanotubes (CNTs) as Flip-Chip Connections in 3-D Integrated Circuits With an Ultralow Connection Resistance

2. The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) Through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs

3. The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology

4. An Analytical Through Silicon Via (TSV) Surface Roughness Model Applied to a Millimeter Wave 3-D IC

5. High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design

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