Deep Sub-Electron Read Noise in Image Sensors Using a Multigate-Source-Follower
Author:
Affiliation:
1. Thayer School of Engineering, Dartmouth College, Hanover, NH, USA
Funder
Jet Propulsion Laboratory
NASA Award Subcontract from Rochester Institute of Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9780469/09764826.pdf?arnumber=9764826
Reference12 articles.
1. 1/f noise and related surface effects in germanium;mcwhorter,1955
2. A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor
3. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
4. First-principles simulation of electron mean-free-path spectra and thermoelectric properties in silicon
5. Photon-number-resolving megapixel image sensor at room temperature without avalanche gain
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1. New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain;2024-04-08
2. Influence of Pixel Design on Charge Transfer in Pinned Photodiode CMOS Image Sensors;Journal of Physics: Conference Series;2023-01-01
3. Characterization of single-photon sensing and photon-number resolving CMOS image sensors;X-Ray, Optical, and Infrared Detectors for Astronomy X;2022-08-29
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