Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

Published:2022-10 Issue:10 Volume:69 Page:5944-5947
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ma Jie¹,Gu Yong¹,Zhang Long¹^ORCID,Luo Min¹^ORCID,Pan Chengwu¹,Liu Siyang²^ORCID,Sun Weifeng²^ORCID,Zhu Jing³,He Nailong⁴,Zhang Sen⁴

Affiliation:

1. National ASIC System Engineering Research Center, School of Microelectronics, Southeast University, Nanjing, China

2. National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China

3. Wuxi i-Driver Electronics Company Ltd., Wuxi, China

4. CSMC Technologies Company, Wuxi, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Distinguished Young Scholars Program of Southeast University

Foundation of State Key Laboratory of Wide-Bandgap Semiconductor Power Electronics Devices

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09851626.pdf?arnumber=9851626

Reference23 articles.

1. Modeling of Breakdown Voltage for SOI Trench LDMOS Device Based on Conformal Mapping

2. Fast recovery SOI PiN diode with multiple trenches

3. Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

4. Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers

5. A Novel Diode-Clamped Carrier-Stored SOI Lateral Superjunction IGBT with Ultralow Turn-off Loss and Saturation Current

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module;IEEE Transactions on Power Electronics;2024-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3