1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints-Reference-Cited by-同舟云学术

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1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints

Published:1979-04 Issue:2 Volume:14 Page:268-275
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Ning T.H.,Cook P.W.,Dennard R.H.,Osburn C.M.,Schuster S.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22564/01051173.pdf?arnumber=1051173

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