Development ot ohmic contacts for GaAs devices using epitaxial Ge films-Reference-Cited by-同舟云学术

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Development ot ohmic contacts for GaAs devices using epitaxial Ge films

Published:1978-08 Issue:4 Volume:13 Page:430-435
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Anderson W.T.,Christou A.,Davey J.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22561/01051073.pdf?arnumber=1051073

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

3. Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition;Journal of Applied Physics;2010-06-15

4. Analysis of inhomogeneous Ge/SiC heterojunction diodes;Journal of Applied Physics;2009-11

5. Characterization of n-n Ge/SiC heterojunction diodes;Applied Physics Letters;2008-09-15

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