Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors-Reference-Cited by-同舟云学术

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Published:2011-05 Issue:3 Volume:29 Page:032209
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Zhang Xingui,Guo Huaxin,Lin Hau-Yu,Cheng Chao-Ching,Ko Chih-Hsin,Wann Clement H.,Luo Guang-Li,Chang Chun-Yen,Chien Chao-Hsin,Han Zong-You,Huang Shih-Chiang,Chin Hock-Chun,Gong Xiao,Koh Shao-Ming,Lim Phyllis Shi Ya,Yeo Yee-Chia

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3592211

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