Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation-Reference-Cited by-同舟云学术

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Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation

Published:2020-07 Issue:7 Volume:67 Page:1540-1546
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Shvetsov-Shilovskiy Ivan I.^ORCID,Chumakov Alexander I.^ORCID,Pechenkin Alexander A.,Bobrovsky Dmitry V.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9142457/09112255.pdf?arnumber=9112255

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study;IEEE Transactions on Nuclear Science;2023-08

2. Probabilistic Approach to Determining the Transient Upset Level of Digital Integrated Circuits;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09

3. The Optimal Measuring System Composition for the Transceivers Radiation Hardness Investigation;2021 International Siberian Conference on Control and Communications (SIBCON);2021-05-13

4. Solid-State Drives Parameters Control System For Ionizing Radiation Tests;2021 International Siberian Conference on Control and Communications (SIBCON);2021-05-13

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