Comparison Between Silicon Carbide and Diamond for Thermal Neutron Detection at Room Temperature

Author:

Obraztsova O.ORCID,Ottaviani L.ORCID,Geslot B.ORCID,de Izarra G.,Palais O.ORCID,Lyoussi A.,Vervisch W.

Funder

CEA Cadarache

Aix-Marseille University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors;IEEE Transactions on Nuclear Science;2024-05

2. Study on 4H-SiC Trench Schottky-Type Neutron Detector;IEEE Transactions on Instrumentation and Measurement;2024

3. Electrical properties study of the 4H-SiC detectors based on thick epitaxial layer;AIP Conference Proceedings;2024

4. A study of the signal rising edge produced by a charge sensitive preamplifier connected to a 4H-SiC detector;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-05

5. Primary irradiation damages and tribological property evolutions of heavy-ion radiated microcrystalline diamond films grown by MPCVD;Diamond and Related Materials;2023-03

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