Investigation of a 130nm CMOS Low Noise Amplifier's Performance Across Corner Conditions for WLAN Applications-Reference-Cited by-同舟云学术

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Investigation of a 130nm CMOS Low Noise Amplifier's Performance Across Corner Conditions for WLAN Applications

Published:2024-05-24 Issue: Volume: Page:318-323
ISSN:
Container-title:2024 IEEE 14th Symposium on Computer Applications & Industrial Electronics (ISCAIE)
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Author:

Nu'man Azman Ahmad Hazim¹,Muhamad Maizan²,Amin Nabila Husna¹,Hussin Hanim²,Aziz Anees Abdul²,Ahmad Norhawati³

Affiliation:

1. School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA,Shah Alam,Selangor,Malaysia,40450

2. School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA,Integrated Microelectronic Systems and Applications (IMSaA),Shah Alam,Selangor,Malaysia,40450

3. Universiti Malaysia Perlis,Faculty of Electronic Engineering & Technology,Arau,Perlis,Malaysia,02600

Funder

Universiti Teknologi MARA for funding under the Geran Penyelidikan MyRA 600-RMC/MYRA 5/3/LESTARI

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10576198/10576206/10576348.pdf?arnumber=10576348

Reference17 articles.

1. Robust Design Methodology for RF LNA including Corner Analysis;Martinez-Perez

2. A 2.4 GHz Low Power and High Gain LNA in 0.18μm CMOS for Radio Applications

3. Multi-finger MOSFET low noise amplifier performance analysis

4. Study and analysis of a 0.18 μm single-ended inductively-degenerated common-source cascode LNA under post-layout corner conditions

5. Design, Reliability Investigation and Analysis of 60 GHz band LNA in 65nm CMOS for 5G Mobile Communication

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