Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications-Reference-Cited by-同舟云学术

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Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

Published:2004-10 Issue:10 Volume:39 Page:1605-1614
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Johnson J.B.,Joseph A.J.,Sheridan D.C.,Maladi R.M.,Brandt P.-O.,Persson J.,Andersson J.,Bjorneklett A.,Persson U.,Abasi F.,Tilly L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/29489/01336988.pdf?arnumber=1336988

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4.4-6.4-GHz compact SiGe power amplifier with 30.5-dBm psat and 34.8% PAE based on triple-tank power combiner;IEICE Electronics Express;2023-12-25

2. RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique;Micromachines;2023-11-03

3. Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. A Broadband SiGe HBT Cascode Power Amplifier Achieving Watt-Level Peak Output Power With 38.6% PAE and 90.9% Large-Signal Fractional Bandwidth;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-12

5. Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

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