A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS-Reference-Cited by-同舟云学术

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A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

Published:2005-07 Issue:7 Volume:40 Page:1434-1442
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Linten D.,Thijs S.,Natarajan M.I.,Wambacq P.,Jeamsaksiri W.,Ramos J.,Mercha A.,Jenei S.,Donnay S.,Decoutere S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/31404/01458986.pdf?arnumber=1458986

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