A Compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications-Reference-Cited by-同舟云学术

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A Compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications

Published:2007-05 Issue:5 Volume:42 Page:1121-1130
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Bhatia Karan,Hyvonen Sami,Rosenbaum Elyse

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4160057/04160060.pdf?arnumber=4160060

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network;Engineering Research Express;2023-09-01

2. Ultrawideband LNA 1960–2019: Review;IET Circuits, Devices & Systems;2021-04-22

3. Methodology of Noise Flatness Based on Network Quality Factor in RF Wideband Applications;Circuits, Systems, and Signal Processing;2020-02-26

4. An S‐ to Ku‐wideband low‐noise amplifier using asymmetric π filter and shunt‐peaking technique with simultaneous input match and noise flatness;Microwave and Optical Technology Letters;2019-03-10

5. Investigation and application of vertical NPN devices for RF ESD protection in BiCMOS technology;Microelectronics Reliability;2018-04

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