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2. Engineering of dual-direction SCR cells for component and system level ESD, surge, and longer EOS events;Tazzoli,2015
3. Design of ESD protection for large signal swing RF inputs operating to 24GHz in 0.18μm SiGe BiCMOS process;Parthasarathy,2015
4. Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology;Lin;IEEE Nanotechnology Materials and Devices Conference,2015
5. Influences of substrate pickup integrated with the source-end engineering on ESD/latch-up reliabilities in a 0.35-um 3.3-V process;Chen,2016