40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology-Reference-Cited by-同舟云学术

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40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology

Published:2002-09 Issue:9 Volume:2 Page:1106-1114
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Freeman G.,Meghelli M.,Kwark Y.,Zier S.,Rylyakov A.,Sorna M.A.,Tanji T.,Schreiber O.M.,Walter K.,Jae-Sung Rieh ,Jagannathan B.,Joseph A.,Subbanna S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22087/01028087.pdf?arnumber=1028087

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 28-GHz Low Phase Noise Class-C Transformer VCO With 187-dBc/Hz FoM in 90-nm SiGe BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2023-10

2. 10Gb/s 5Vpp AND 5.6Vpp drivers implemented together with a monolithically integrated silicon modulator in 0.25μm SiGe:C BiCMOS;Optics Communications;2015-02

3. A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 Î¼m SiGe:C BiCMOS;Frontiers in Physics;2014-11-07

4. RF small signal avalanche for bipolar transistor circuit design: Characterization, modeling and repercussions;Microelectronics Reliability;2011-03

5. SiGe/Si Heterojunction Bipolar Transistors and Circuits;Comprehensive Semiconductor Science and Technology;2011

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