A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 Î¼m SiGe:C BiCMOS-Reference-Cited by-同舟云学术

A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 Î¼m SiGe:C BiCMOS

Published:2014-11-07 Issue: Volume:2 Page:
ISSN:2296-424X
Container-title:Frontiers in Physics
language:
Short-container-title:Front. Phys.

Author:

Goll Bernhard,Thomson David J.,Zimmermann Lars,Porte Henri,Gardes Frederic Y.,Hu Youfang,Knoll Dieter,Lischke Stefan,Tillack Bernd,Reed Graham T.,Zimmermann Horst

Publisher

Frontiers Media SA

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics,Materials Science (miscellaneous),Biophysics

Reference12 articles.

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4. 25 Gb/s silicon photonic transceivers;Pinguet,2012

5. A 10 Gb/s 0.25 Î¼m SiGe modulator driver for photonic-integration;Goll;Analog Integr Circ Signal Process,2014

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1. Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm;Applied Sciences;2019-09-13

2. High-Speed Silicon Photonics Modulators;Proceedings of the IEEE;2018-12