Correlation between nonionizing energy loss and the offset voltage shift in InP-InGaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Correlation between nonionizing energy loss and the offset voltage shift in InP-InGaAs heterojunction bipolar transistors

Published:2001-12 Issue:6 Volume:48 Page:2262-2269
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Shatalov A.¹,Subramanian S.,Klein A.

Affiliation:

1. Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/21189/00983205.pdf?arnumber=983205

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Displacement damage simulation of InP induced by proton and α in Low Earth Orbit;Acta Physica Sinica;2024

2. Geant4 simulation of neutron displacement damage effect in InP;Acta Physica Sinica;2022

3. Analysis of Bipolar Integrated Circuit Degradation Mechanisms Against Combined TID–DD Effects;IEEE Transactions on Nuclear Science;2021-08

4. Gamma non-ionizing energy loss: Comparison with the damage factor in silicon devices;Journal of Applied Physics;2018-03-07

5. Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers;Young Scientists Forum 2017;2018-03-05

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