Gamma non-ionizing energy loss: Comparison with the damage factor in silicon devices-Reference-Cited by-同舟云学术

Gamma non-ionizing energy loss: Comparison with the damage factor in silicon devices

Published:2018-03-07 Issue:9 Volume:123 Page:095703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

El Allam E.¹^ORCID,Inguimbert C.²,Meulenberg A.³^ORCID,Jorio A.¹,Zorkani I.¹

Affiliation:

1. Solid State Physics Laboratory, Faculty of Sciences Dhar el Mahraz, University Sidi Mohamed Ben Abdellah, P.B 1796, Atlas-Fez, Morocco

2. ONERA-DPhIEE, 2 avenue E. Belin, 31055 Toulouse, France

3. Science for Humanity Trust, Inc., Tucker, Georgia 30084-5641, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5013211

Reference25 articles.

1. Review of displacement damage effects in silicon devices

2. Radiation effects on microelectronics in space

3. B. Jayashree , A. Meulenberg , Ramani , M. C. Radhakrishna , and S. Khan , in Proceedings of the 9th European Conference on Radiation and its Effects on Components and Systems, Deauville, France, 10–14 September (2007), p. 1.

4. A. Meulenberg and F. C. Treble , in Proceedings of the 10th IEEE Photovoltaic Specialists Conference, Palo Alto, California, USA, 13–14 November (1973), p. 359.

5. Correlation of Particle-Induced Displacement Damage in Silicon

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