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Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview

  • Published:2022-02 Issue:1 Volume:10 Page:1232-1254
  • ISSN:2168-6777
  • Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
  • language:
  • Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Pu ShiORCID,Yang FeiORCID,Vankayalapati Bhanu Teja,Akin BilalORCID

Funder

SRC/TxACE Task

U.S. National Science Foundation through the I/UCRC WindSTAR

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Competitive Failures Decoupling and Mechanisms Analysis of SiC MOSFET Module Under Power Cycling Stress;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-12

2. DC Power Cycling Test and Lifetime Prediction for SiC MOSFETs;2023 26th International Conference on Electrical Machines and Systems (ICEMS);2023-11-05

3. Integrated AC Power Cycling Platform with Automated Characterization for T-Type Power Module in Photovoltaic Applications;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

4. Online Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Parasitic Capacitance Aging Characteristics;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

5. Improving Power Cycle Lifetime of SiC Power Modules with Double-Bonded Wire: Experimental and Simulation Analysis;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
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