Temperature dependence of backgating effect in GaAs integrated circuits
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/31942/01485332.pdf?arnumber=1485332
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an f T/f max over 100 GHz/200 GHz*;Chinese Physics B;2021-08-01
2. Improved analytical model for threshold behavior of sidegating effect in GaAs metal–semiconductor field-effect transistors induced by impact ionization of deep traps;Journal of Applied Physics;1999-01
3. Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs;IEEE Transactions on Nuclear Science;1998-12
4. Enhancement of the Breakdown Voltage ofGaAs/AlxGa1-xAsHeterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1997-04-15
5. Numerical simulation of the temperature dependence of the sidegating effect in GaAs MESFETs;Solid-State Electronics;1994-08
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