Enhancement of the Breakdown Voltage ofGaAs/AlxGa1-xAsHeterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
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Published:1997-04-15
Issue:Part 1, No. 4A
Volume:36
Page:2010-2017
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Mohri Mikio,Kakinuma Hiroaki,Ueda Takashi,Akiyama Masahiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering