AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications-Reference-Cited by-同舟云学术

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AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications

Published:2016-06 Issue:6 Volume:63 Page:898-906
ISSN:0885-3010
Container-title:IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
language:
Short-container-title:IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

Author:

Legrani Ouarda,Aubert Thierry,Elmazria Omar,Bartasyte Ausrine,Nicolay Pascal,Talbi Abdelkrim,Boulet Pascal,Ghanbaja Jaafar,Mangin Denis

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Acoustics and Ultrasonics,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/58/7476925/07446366.pdf?arnumber=7446366

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy;Laser & Photonics Reviews;2024-04-20

2. High-Temperature Harsh-Environment SAW Sensor Technology;2023 IEEE International Ultrasonics Symposium (IUS);2023-09-03

3. AlN/Sapphire-Based SAW Resonators With Q Over 10000 for Temperature Sensors;IEEE Sensors Journal;2023-04-15

4. High-Temperature Conductive Stability of ITO/Pt Bilayer-Film Electrode for Applications in High-Temperature SAW Devices;Journal of Nanomaterials;2022-08-24

5. Plasma-Assisted Epitaxy of Piezoelectric ScxAl1-xN Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors;Journal of Electronic Materials;2022-01-22

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