SiC Power Electronics Packaging Prognostics
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4505446/4526225/04526605.pdf?arnumber=4526605
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters;IEEE Transactions on Power Electronics;2024-09
2. A Double-Sided Cooled Split-Phase SiC Power Module With Fuzz Button Interposer;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-10
3. A SEMI-ANALYTICAL MODEL OF THERMAL CONDUCTION OF A MOSFET TRANSISTOR USING THE THERMAL QUADRUPOLES METHOD;Proceeding of International Heat Transfer Conference 17;2023
4. Development of a 250°C 15kV Supercascode switch using SiC JFET technology;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07
5. Characterization of a Bare-Die SiC-Based, Wirebond-Less, Integrated Half-Bridge With Multi-Functional Bus-Bars;IEEE Transactions on Transportation Electrification;2022-09
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