Gate Oxide Reliability Under ESD-Like Pulse Stress-Reference-Cited by-同舟云学术

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Gate Oxide Reliability Under ESD-Like Pulse Stress

Published:2004-09 Issue:9 Volume:51 Page:1528-1532
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Wu J.,Rosenbaum E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29334/01325859.pdf?arnumber=1325859

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On-Chip Single-Shot Pulse Generator for TDDB Characterization on a Sub-Nanosecond Timescale;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Compact Models for Simulation of On-Chip ESD Protection Networks;IEEE Transactions on Electron Devices;2024-01

3. Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN;ACS Applied Materials & Interfaces;2022-05-23

4. Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection;Nanomaterials;2022-05-19

5. Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices;Science China Information Sciences;2021-08-09

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