Mobility Enhancement in Dual-Channel P-MOSFETs-Reference-Cited by-同舟云学术

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Mobility Enhancement in Dual-Channel P-MOSFETs

Published:2004-09 Issue:9 Volume:51 Page:1424-1431
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Jung J.,Yu S.,Lee M.L.,Hoyt J.L.,Fitzgerald E.A.,Antoniadis D.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29334/01325846.pdf?arnumber=1325846

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain induced changes in performance of strained-Si/strained-Si1-y Ge y /relaxed-Si1-x Ge x MOSFETs and circuits for digital applications;Journal of Central South University;2017-06

2. Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS);Advanced Materials Research;2015-06-08

3. Si–Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress;Applied Physics Letters;2010-03-22

4. New fabrication of a strained Si/Si1−yGey dual channel on a relaxed Si1−xGex virtual substrate using a Ge-rich layer formed by oxidation;Applied Surface Science;2008-07

5. Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate;Semiconductor Science and Technology;2007-02-23

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