An 8-Gb GDDR6X DRAM Achieving 22 Gb/s/pin With Single-Ended PAM-4 Signaling-Reference-Cited by-同舟云学术

An 8-Gb GDDR6X DRAM Achieving 22 Gb/s/pin With Single-Ended PAM-4 Signaling

Published:2022-01 Issue:1 Volume:57 Page:224-235
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Hollis Timothy M.^ORCID,Schneider Ronny,Brox Martin^ORCID,Hein Thomas,Spirkl Wolfgang,Bach Martin,Balakrishnan Mani,Dietrich Stefan,Funfrock Fabien,Ivanov Milena,Jovanovic Natalija,Kuzmenka Maksim,Lauber Daniel,Ocon-Garrido Juan,Ovard David,Pfefferl K. Peter,Piatkowski Sven,Piscopo Gabriele^ORCID,Plan Manfred,Polney Jens,Pottgiesser Jan,Rau Stephan,Vitale Filippo,Walter Marc^ORCID,Alvarez-Gonzalez Marcos,Chetreanu Cristian,Sorrentino Andrea,Weller Jorg,Mayer Peter,Richter Michael,Garcia Casto Salobrena,Schneider Andreas,Wong Shih Nern^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9664397/09516687.pdf?arnumber=9516687

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