A 20F2/Bit Current-Integration-Based Differential nand-Structured PUF for Stable and V/T Variation-Tolerant Low-Cost IoT Security
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea
Funder
Basic Science Research Program through the National Research Foundation of Korea
Samsung Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/9900477/09843958.pdf?arnumber=9843958
Reference34 articles.
1. 36.4 A Physically Unclonable Function Combining a Process Mismatch Amplifier in an Oscillator Collapse Topology
2. A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement
3. An SRAM-Based PUF With a Capacitive Digital Preselection for a 1E-9 Key Error Probability
4. A 373-F² 0.21%-Native-BER EE SRAM Physically Unclonable Function With 2-D Power-Gated Bit Cells and VSS Bias-Based Dark-Bit Detection
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3. Using Gate Tunneling in Bulk CMOS to Create a PUF;IEEE Internet of Things Journal;2024-01-15
4. Enhancing the Reliability of SC PUF Through Optimal Capacitor Configuration;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01
5. Design of PUF Circuit Based on Charge Leakage of Cascade Dynamic Gate;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24
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