Efficient Wideband mmW Transceiver Front End for 5G Base Stations in 22-nm FD-SOI CMOS

Author:

Elgaard Christian1ORCID,Özen Mustafa2ORCID,Westesson Eric2,Mahmoud Ahmed2ORCID,Torres Florent1ORCID,Reyaz Shakila Bint2ORCID,Forsberg Therese2ORCID,Akbar Rehman1ORCID,Hagberg Hans3ORCID,Sjöland Henrik1ORCID

Affiliation:

1. Ericsson Research, Ericsson AB, Lund, Sweden

2. Radio frequency integrated circuit (RFIC) Design, Ericsson AB, Lund, Sweden

3. Digital RF, Ericsson AB, Lund, Sweden

Funder

Ericsson Research, Ericsson AB, Sweden

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis and design of a GHz bandwidth adaptive bias circuit for an mmW Doherty amplifier;Analog Integrated Circuits and Signal Processing;2024-07

2. Fully Integrated SiGe HBT BiCMOS Transmit-Receive Front-End IC for 5G mmW Radio with A Reconfigurable Built-In Diode RF Switch;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A 45 nm RFSOI CMOS-based 24.25-29.5 GHz 2×16-Channel Phased-Array Transceiver IC for 5G NR Applications;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. 39 GHz Transmit/Receive Front-End-Module with Back-Off Efficiency Enhancement for 5G Communication;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

5. A 1.8–5.4-GHz GaN MMIC Distributed Efficient Power Amplifier With Reactance Compensation and Adaptive Biasing;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-04

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