A 5G FR2 Power-Amplifier With an Integrated Power-Detector for Closed-Loop EIRP Control-Reference-Cited by-同舟云学术

A 5G FR2 Power-Amplifier With an Integrated Power-Detector for Closed-Loop EIRP Control

Published:2022-05 Issue:5 Volume:57 Page:1257-1266
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Bhagavatula Venumadhav¹^ORCID,Zhang Fan¹,Kuo Chechun¹,Sarkar Anirban¹,Verma Ashutosh¹^ORCID,Chang Tienyu¹,Yu Xiaohua¹,Yoon Dae-Young²,Lu Ivan Siu-Chuang¹,Son Sang Won¹,Cho Thomas Byunghak²^ORCID

Affiliation:

1. Samsung Semiconductor, Inc., San Jose, CA, USA

2. Samsung Electronics Device Solutions, Hwaseong-si, Gyeonggi-do, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9761850/09714168.pdf?arnumber=9714168

Reference24 articles.

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2. A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control

3. Bipolar Microwave RMS Power Detectors

4. An E-band fully-integrated true power detector in 28 nm CMOS;qunaj;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2019

5. A Low-Power Reflection-Coefficient Sensor for 28-GHz Beamforming Transmitters in 22-nm FD-SOI CMOS

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