A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit MAC Unit in 22-nm FinFET Process for Edge Inference-Reference-Cited by-同舟云学术

A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit MAC Unit in 22-nm FinFET Process for Edge Inference

Published:2023-04 Issue:4 Volume:58 Page:1037-1050
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Wang Hechen¹^ORCID,Liu Renzhi¹^ORCID,Dorrance Richard¹^ORCID,Dasalukunte Deepak¹^ORCID,Lake Dan¹^ORCID,Carlton Brent¹^ORCID

Affiliation:

1. Intel Labs, Intel Corporation, Hillsboro, OR, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/10082904/10008405.pdf?arnumber=10008405

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