The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures-Reference-Cited by-同舟云学术

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The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures

Published:1994-12 Issue:6 Volume:41 Page:2530-2535
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Johnson G.H.,Kemp W.T.,Schrimpf R.D.,Galloway K.F.,Ackermann M.R.,Pugh R.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/7975/00340612.pdf?arnumber=340612

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NBTI and irradiation related degradation mechanisms in power VDMOS transistors;Microelectronics Reliability;2018-09

2. Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors;Japanese Journal of Applied Physics;2018-03-05

3. NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors;IEEE Transactions on Nuclear Science;2016-04

4. Single-Event Burnout Hardening of Power UMOSFETs With Optimized Structure;IEEE Transactions on Electron Devices;2013-06

5. Study of the subthreshold swing of a pMOSFET as a dosimetric parameter;Sensors and Actuators A: Physical;2012-11

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