Physical origin of the excess thermal noise in short channel MOSFETs-Reference-Cited by-同舟云学术

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Physical origin of the excess thermal noise in short channel MOSFETs

Published:2001-02 Issue:2 Volume:22 Page:101-103
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jung-Suk Goo ,Chang-Hoon Choi ,Abramo A.,Jae-Gyung Ahn ,Zhiping Yu ,Lee T.H.,Dutton R.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/19532/00902845.pdf?arnumber=902845

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