A W-Band Power Amplifier With 19.6% PAE in 45-nm SOI CMOS-Reference-Cited by-同舟云学术

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A W-Band Power Amplifier With 19.6% PAE in 45-nm SOI CMOS

Published:2024-03-15 Issue: Volume: Page:1896-1900
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Container-title:2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC)
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Author:

Cai Shutian¹,Chen Zhiming¹,Li Xiaoran¹,Liu Zicheng²,Han Fang³,Qi Quanwen³,Wang Xinghua¹

Affiliation:

1. Beijing Institute of Technology,School of Integrated Circuits and Electronics,Beijing,China

2. BIT Chongqing Institute of Microelectronics and Microsystems,Chongqing,China

3. Yangtze Delta Region Academy of Beijing Institute of Technology,Jiaxing,Zhejiang,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10502391/10503583/10503840.pdf?arnumber=10503840

Reference10 articles.

1. A 109 GHz CMOS Power Amplifier With 15.2 dBm Psat and 20.3 dB Gain in 65-nm CMOS Technology

2. A 94GHz differential power amplifier in 45nm LP CMOS

3. A W-band 21.1 dBm power amplifier with an 8-way zero-degree combiner in 45 nm SOI CMOS

4. Two-Way Current-Combining $W$-Band Power Amplifier in 65-nm CMOS

5. Two W-Band Wideband CMOS mmW PAs for Automotive Radar Transceivers

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