Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors-Reference-Cited by-同舟云学术

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Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Published:2022-06-20 Issue: Volume: Page:
ISSN:
Container-title:2022 China Semiconductor Technology International Conference (CSTIC)
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Author:

Yang Jingwen¹,Chen Kun¹,Sun Xin¹,Wang Dawei¹,Wang Qiang¹,Liu Tao¹,Huang Ziqiang¹,Pan Zhecheng¹,Xu Saisheng¹,Wu Chunlei¹,Xu Min¹,Zhang David Wei¹

Affiliation:

1. School of Microelectronics, Fudan University,Shanghai,China,200433

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9856647/9856709/09856715.pdf?arnumber=9856715

Reference7 articles.

1. Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

2. A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications

3. Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

4. Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

5. Wet Chemical Etching of Si, Si1-xGex, and Ge in HF: H2O2:CH3COOH;holhinder;Journal of The Electrochemical Society,2010

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power;Discover Nano;2024-07-02

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