Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process-Reference-Cited by-同舟云学术

Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process

Published:2022-10 Issue:10 Volume:43 Page:1661-1664
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tsou Ya-Jui¹^ORCID,Chen Wei-Jen¹,Liu Chin-Yu²,Chen Yi-Ju³,Li Kai-Shin³,Shieh Jia-Min³^ORCID,Liu Pang-Chun²,Chung Wei-Yuan²,Liu C. W.²^ORCID,Huang Ssu-Yen⁴^ORCID,Wei Jeng-Hua⁵,Tang Denny D.⁵,Sun Jack Yuan-Chen³

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

3. Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

4. Department of Physics, National Taiwan University, Taipei, Taiwan

5. Industrial Technology Research Institute, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09849666.pdf?arnumber=9849666

Reference28 articles.

1. Circuit and systems based on advanced MRAM for near future computing applications;fujita;Proc Symp VLSI Circuits,2019

2. First demonstration of interface-enhanced SAF enabling 400°C-robust 42 nm p-SOT-MTJ cells with STT-assisted field-free switching and composite channels;tsou;Proc Symp VLSI Technol,2021

3. Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

4. Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation

5. Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field-Free Spin-Orbit Torque Switching of Co/Pd Memory Layer in CPP-GMR With Perpendicularly Magnetized SAF Pinned Layer;IEEE Transactions on Magnetics;2023-11

2. Enhancement of Magnetic and Electric Transport Performance of Perpendicular Spin-Orbit Torque Magnetic Tunnel Junction by Stop-on-MgO Etching Process;IEEE Electron Device Letters;2023-03