Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode
Author:
Affiliation:
1. Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
2. NexGen Power Systems Inc., Santa Clara, CA, USA
Funder
National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/55/9721042/9686687-aam.pdf
Reference22 articles.
1. Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load
2. Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
3. SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization
4. 1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability
5. 1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities
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1. Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
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4. Dynamic R ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01
5. Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments;Applied Physics Letters;2023-12-11
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