Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors-Reference-Cited by-同舟云学术

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Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Published:2022-10 Issue:10 Volume:43 Page:1713-1716
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Meguro Tatsuya¹^ORCID,Takeyama Akinori²^ORCID,Ohshima Takeshi²^ORCID,Tanaka Yasunori³^ORCID,Kuroki Shin-Ichiro¹^ORCID

Affiliation:

1. Research Institute for Nanodevices, Hiroshima University, Higashihiroshima, Hiroshima, Japan

2. National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan

3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan

Funder

Nuclear S&T and Human Resource Development, Strategic Nuclear Power Joint Research Program

Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09862971.pdf?arnumber=9862971

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays;Applied Physics Express;2024-08-01

2. Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT;Aerospace;2024-04-26

3. Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model;Japanese Journal of Applied Physics;2024-01-01

4. Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors;Quantum Beam Science;2023-10-11

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