Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory-Reference-Cited by-同舟云学术

Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory

Published:2022-03 Issue:3 Volume:43 Page:422-425
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Kai¹^ORCID,He Jiajing¹,Zhang Wenyu¹,Liu Huayou¹^ORCID,Dan Yaping¹^ORCID

Affiliation:

1. School of Electronic Information and Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China

Funder

Special-Key Project of Innovation Program of Shanghai Municipal Education Commission

National Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9721042/09687576.pdf?arnumber=9687576

Reference28 articles.

1. Electronic properties of the hydrogen‐carbon complex in crystalline silicon

2. Interstitial defect reactions in silicon

3. Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors

4. ZnO Nanowire UV Photodetectors with High Internal Gain

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