InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window-Reference-Cited by-同舟云学术

InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Published:2022-12 Issue:12 Volume:43 Page:2105-2108
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kao Min-Lu¹^ORCID,Liang Yan-Kui²^ORCID,Lin Yuan¹,Weng You-Chen³,Dee Chang-Fu⁴,Liu Po-Tsun⁵^ORCID,Lee Ching-Ting⁶^ORCID,Chang Edward Yi⁷^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

3. College of Photonics, National Yang Ming Chiao Tung University, Tainan, Taiwan

4. Institute of Microengineering and Nanoelectronics (IMEN), University Kebangsaan Malaysia, Bangi, Malaysia

5. Department of Photonics and the Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

6. Department of Electrical Engineering, Yuan Ze University, Taoyuan, Taiwan

7. Department of Materials Science and Engineering, International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Chung-Shan Institute of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9965979/09927413.pdf?arnumber=9927413

Reference29 articles.

1. Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films

2. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

3. Ferroelectricity in boron-substituted aluminum nitride thin films

4. Ferroelectricity in wurtzite structure simple chalcogenide

5. Mechanism of polarization switching in wurtzite-structured zinc oxide thin films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing Noise Immunity of Schmitt Triggers through Dual PMOS Transistor;2024 IEEE 13th International Conference on Communication Systems and Network Technologies (CSNT);2024-04-06

2. Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers;Applied Physics Letters;2023-09-04